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FLL21E045IY 参数 Datasheet PDF下载

FLL21E045IY图片预览
型号: FLL21E045IY
PDF下载: 下载PDF文件 查看货源
内容描述: L, S波段高功率GaAs FET [L,S-band High Power GaAs FET]
分类和应用:
文件页数/大小: 6 页 / 306 K
品牌: EUDYNA [ EUDYNA DEVICES INC ]
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FLL21E045IY
L,S-band High Power GaAs FET
FEATURES
・High
Voltage Operation (VDS=28V) GaAs FET
・High
Gain: 15.5dB(typ.) at Pout=40dBm(Avg.)
・Broad
Frequency Range : 2110 to 2170MHz
・High
Reliability
DESCRIPTION
The FLL21E045IY is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA and Multi-carrier PCS base station
amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Condition
T
C
=25 C
(Case Tem perature)
o
Rating
32
-3
92
65 to +175
200
o
Unit
V
V
W
o
C
o
C
-
-
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
Symbol
V
DS
I
GF
I
GR
T
ch
Condition
R
G
=2
R
G
=2
Limit
<28
<176
>-15.9
155
Unit
V
mA
mA
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C)
Item
Pinch-Off Voltage
Gate-Source Breakdown Voltage
3rd Order Intermodulation Distortion
Power Gain
Drain Efficiency
Adjacent Channel Leakage Power Ratio
Themal Resistance
Note 1 : IM
3
, ACLR and Gain test conditions as follows
IM
3
& Gain : f
0
=2.1325GHz, f
1
=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f
0
-15MHz and f
1
+15MHz.
ACLR : f
0
=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f
0
+/-5MHz
o
Symbol
V
P
V
GSO
IM
3
G
P
η
D
ACLR
R
th
Condition
V
DS
=5V, I
DS
=75.4mA
I
GS
=-754uA
V
DS
=28V
I
DS
(DC)=500mA
P
out
=40dBm(Avg.)
Note 1
Limit
Min.
-0.1
-5
-
14.5
-
-
-
Typ.
-0.2
-
-33
15.5
26
-35
1.7
Max.
-0.5
-
-30
-
-
-
1.9
Unit
V
V
dBc
dB
%
o
Channel to Case
dBc
C/W
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
CLASS
III
2000V ~
CASE STYLE : IY
Edition 1.1
June 2004
1