FLL21E180IU
High Voltage - High Power GaAs FET
FEATURES
・
High Voltage Operation : VDS=28V
・
High Gain: 15.0dB(typ.) at Pout=46dBm(Avg.)
・
Broad Frequency Range : 2100 to 2200MHz
・
Proven Reliability
DESCRIPTION
The FLL21E180IU is a high power GaAs FET that offers
high efficiency, ease of matching, greater consistency and
broad bandwidth for high power L-band amplifiers.
This device is target for high voltage, low current operation in
digitally modulated base station. This product is ideally suited
for W-CDMA base station amplifiers while offering high gain long
term reliability and ease for use.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V
DS
V
GS
P
t
T
stg
T
ch
Condition
Tc=25 C
o
Rating
32
-3
230
-65 to +175
200
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
Symbol
V
DS
I
GF
I
GR
T
ch
Condition
R
G
=1
Ω
R
G
=1
Ω
Limit
<28
<705
>-64
155
Unit
V
mA
mA
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Symbol Condition
min.
Pinch-Off Voltage
Gate-Source Breakdown Voltage
3rd Order Inter modulation Distortion
Power Gain
Drain Efficiency
Adjacent Channel Leakage Power Ratio
Thermal Resistance
V
p
V
GSO
IM
3
Gp
η
d
ACLR
R
th
V
DS
=5V I
DS
=150mA
I
GS
=-1.5mA
V
DS
=28V
I
DS(DC)
=1.7A
Pout=46dBm(Avg.)
note
Channel to Case
-0.1
-5
-
14.0
-
-
-
Limit
Typ. Max.
-0.2
-34
15.0
26.0
-35
0.55
-0.5
-30
-
-
-
0.65
Unit
V
V
dBc
dB
%
dBc
o
C
/W
Note 1 : IM3 ACLR and Gain test condition as follows:
IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-164ch
non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz.
ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation,
measured over 3.84MHz at fo+/-5MHz.
Edition 1.2
Mar 2004
1
EUDYNA [ EUDYNA DEVICES INC ]
