FLL810IQ-3C
L-Band High Power GaAs FET
FEATURES
•
•
•
•
•
•
Push-Pull Configuration
High Power Output: 80W
High PAE: 50%.
Excellent Linearity
Suitable for class AB operation.
Hermetically Sealed Package
DESCRIPTION
The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.
This device offers excellent linearity, ease of matching, and greater consistency
in covering the frequency band of 2.5 to 2.7 GHz. This new product is uniquely
suited for use in MMDS applications as it offers high gain, long term reliability
and ease of use.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25°C
Condition
Rating
15
-5
136
-65 to +175
+175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
gate resistance of 5Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Drain Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain (Note 1)
Power-Added Efficiency
Drain Current
Thermal Resistance
CASE STYLE: IQ
Note 1: The condition for GL is the same as Pout except Pin = 25.0dBm.
Symbol
I
DSS
V
p
V
GSO
P
out
GL
η
add
I
DSR
R
th
Conditions
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 220mA
I
GS
= -2.2mA
Limits
Min. Typ. Max.
-
-0.1
-5
48.0
8
-0.3
-
49.0
12.0
50
11.5
0.8
-
-0.5
-
-
-
-
15.0
1.1
Unit
A
V
V
dBm
dB
%
A
°C/W
V
DS
= 12V
f = 2.6 GHz
I
DS
= 5.0A
Pin = 40.0dBm
11.0
-
-
Channel to Case
-
Edition 1.1
October 2001
1
EUDYNA [ EUDYNA DEVICES INC ]
