FLM0910-25F
X-Band Internally Matched FET
FEATURES
・High
Output Power: P1dB=44dBm(Typ.)
・High
Gain: G1dB=7.0dB(Typ.)
・High
PAE:
ηadd=30%(Typ.)
・Broad
Band: 9.5�½�10.5GHz
・Impedance
Matched Zin/Zout = 50Ω
・Hermetically
Sealed Package
DESCRIPTION
The FLM0910-25F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
15
-5
93.7
-65 to +175
175
Unit
V
V
W
℃
℃
Recommended Operating Condition(Case Temperature Tc=25℃)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Symbol
V
DS
I
GF
I
GR
R
G
=25Ω
R
G
=25Ω
Condition
Limit
≦10
≦64
≧-11.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Symbol
I
DSS
g
m
V
p
V
GSO
P
1dB
G
1dB
I
dsr
η
add
ΔG
R
th
ΔT
ch
Test Conditions
V
DS
=5V , V
GS
=0V
V
DS
=5V , I
DS
=6.92A
V
DS
=5V , I
DS
=500mA
I
GS
=-500uA
V
DS
=10V
f=9.5 - 10.5 GHz
I
DS
=0.6Idss
Zs=Z
L
=50Ω
Min.
-
-
-0.5
-5.0
43
6.0
-
-
-
-
-
Limit
Typ.
10.8
10000
-1.5
-
44
7.0
6.5
30
-
1.4
-
-
Max.
16.2
-
-3.0
-
-
7.2
-
±0.6
1.6
100
Unit
A
mS
V
V
dBm
dB
A
%
dB
℃/W
℃
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Thermal Resistance
Channel Temperature Rise
Channel to Case
10V X Idsr X Rth
CASE STYLE: IK
ESD
Class
Ⅲ
2000V �½�
G.C.P.:Gain Compression Point
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.3
September 2004
1
EUDYNA [ EUDYNA DEVICES INC ]
