FLM1011-20F
X,Ku-Band Internally Matched FET
FEATURES
・High
Output Power: P1dB=43.0dBm(Typ.)
・High
Gain: G1dB=7.0dB(Typ.)
・High
PAE:
ηadd=27%(Typ.)
・Broad
Band: 10.7�½�11.7GHz
・Impedance
Matched Zin/Zout = 50Ω
・Hermetically
Sealed Package
DESCRIPTION
The FLM1011-20F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
°
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
15
-5
93.7
-65 to +175
175
Unit
V
V
W
o
C
C
o
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
°
C)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Symbol
V
DS
I
GF
I
GR
R
G
=25Ω
R
G
=25Ω
Condition
Limit
Unit
V
mA
mA
≤
10
≤
64
≥
-11.2
Limit
Typ.
10.8
10
-1.5
-
43
7.0
6.0
27
-
-45.0
1.4
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
°
C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Symbol
I
DSS
g
m
V
p
V
GSO
P
1dB
G
1dB
I
dsr
η
add
∆G
IM
3
R
th
∆T
ch
Test Conditions
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=6480mA
V
DS
=5V, I
DS
=600mA
I
GS
=-600µA
V
DS
=10V
f=10.7 - 11.7 GHz
I
DS
=0.60I
DSS
(typ)
Zs=Z
L
=50Ω
Min.
-
-
-0.5
-5.0
42
6.0
-
-
-
Max.
16.2
-
-3.0
-
-
-
7.2
-
1.2
-
1.6
Unit
A
S
V
V
dBm
dB
A
%
dB
dBc
o
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
f= 11.7 GHz
Δf=10MHz,
2-tone Test
Pout=31.0dBm (S.C.L.)
Channel to Case
-42.0
-
C /W
CASE STYLE: IK
ESD
Edition 1.2
September 2004
o
C
-
-
100
10V x Idsr X Rth
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Class
III
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW)
1
EUDYNA [ EUDYNA DEVICES INC ]
