FLU35XM
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB=35.5dBm (Typ.)
• High Gain: G1dB=12.5dB (Typ.)
• High PAE:
η
add=46% (Typ.)
• Hermetic Metal/Ceramic (SMT) Package
• Tape and Reel Available
DESCRIPTION
The FLU35XM is a GaAs FET designed for base station applications in the
PCN/PCS frequency range. This is a new product series that uses a surface
mount package that has been optimized for high volume cost driven applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
15
-65 to +175
+175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain - source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with
gate resistance of 100Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power Added Efficiency
Thermal Resistance
Case Style:
XM
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
Symbol
I
DSS
gm
V
p
V
GSO
P
1dB
G
1dB
η
add
R
th
Conditions
V
DS
= 5V, V
GS
=0V
V
DS
= 5V, I
DS
=800mA
V
DS
= 5V, I
DS
=60mA
I
GS
= -60µA
V
DS
= 10V
f=2.0 GHz
I
DS
=0.6I
DSS
Channel to Case
Limits
Min. Typ. Max.
-
-
-1.0
-5
34.5
11.5
-
-
1200 1800
600
-2.0
-
35.5
12.5
46
7.5
-
-3.5
-
-
-
-
10
Unit
mA
mS
V
V
dBm
dB
%
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1
EUDYNA [ EUDYNA DEVICES INC ]
