FMM5703X
24-32GHz LNA MMIC
FEATURES
• Low Noise Figure: NF = 2dB (Typ.) @ f=32 GHz
• High Associated Gain: Gas = 18dB (Typ.) @ f=32 GHz
• Wide Frequency Band: 24-32 GHz
• High Output Power: 9dBm (Typ.) @ f=32 GHz
• Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FMM5703X is a LNA MMIC designed for
applications in the 24-32 GHz frequency range.
This product is well suited for satellite communications,
radio link, and applications where low noise and high
dynamic range are required.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Input Power
Storage Temperature
Operating Backside Temperature
Symbol
VDD
Pin
Tstg
Top
Condition
Rating
4
-3
-65 to +175
-45 to +125
Unit
V
dBm
°C
°C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 3 volts.
2. This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Noise Figure
Associated Gain
Output Power at 1dB G.C.P.
Input Return Loss
Output Return Loss
Symbol
NF
G
as
P1dB
RLin
RLout
VDD = 3V
f = 32 GHz
IDD
=
20mA (Typ.)
ZS = ZL = 50Ω
Conditions (2)
Limits
Min. Typ. Max.
-
15
-
-
-
2.0
18
9
-10
-10
2.5
20
-
-
-
Unit
dB
dB
dBm
dB
dB
Note 1:
RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
Note 2:
Electrical Characteristics specified with RF-probe measurement.
Edition 1.0
December 2000
1
EUDYNA [ EUDYNA DEVICES INC ]
