FMM5804X
17.5-31.5GHz Power Amplifier MMIC
FEATURES
• Output Power: (P1dB): 23.0dBm (Typ.)
• High Gain: (G1dB): 18dB (Typ.)
• High PAE:
η
add = 18% (Typ.)
• Wide Frequency Band: 17.5-31.5 GHz
• Impedance Matched Zin/Zout = 50Ω
• 0.25µm PHEMT Technology
DESCRIPTION
The FMM5804X is a high-gain, wide band 4-stage
MMIC amplifier designed for operation in the 17.5-31.5 GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems.This device is well
suited for point-to-point, point-to-multi-point(LMDS)
and satellite communication system applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain Voltage
Gate Voltage
Input Power
Storage Temperature
Channel Temperature
Operating Backside Temperature
Symbol
VDD
VGG
Pin
Tstg
Tch
Top
Condition
Rating
10
-3.0
16
-65 to +175
175
-40 to +95
Unit
V
V
dBm
°C
°C
°C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 1.0 and -0.08 mA respectively.
3. This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Frequency Range
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Input Return Loss
Output Return Loss
Symbol
f
P
1dB
G
1dB
Iddrf
η
add
RLi
RLo
VDD = 6V
f = 17.5 ~ 31.5 GHz
*: at f = 17.5-30.0 GHz
**: at f = 30.0-31.5 GHz
IDD
=
250mA (Typ.)
ZS = ZL = 50Ω
Conditions
Limits
Min. Typ. Max.
17.5-31.5
23*
21**
15
-
-
-
-
25*
23**
18
300
18
-15
-8
-
-
-
400
-
-
-
Unit
GHz
dBm
dB
mA
%
dB
dB
Note:
RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
G.C.P.: Gain Compression Point
Edition 1.4
July 1999
1
EUDYNA [ EUDYNA DEVICES INC ]
