FMM5805X
17.5-20GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
High Output Power: P1dB = 31.0dBm (Typ.)
High Gain: G1dB = 21.0dB (Typ.)
High PAE:
η
add = 30% (Typ.)
Impedance Matched Zin/Zout = 50Ω
0.25µm PHEMT Technology
DESCRIPTION
The FMM5805X is a high-gain, high power, 3-stage MMIC
amplifier designed for operation in the17.5-20.0 GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems.This device is well suited
for point-to-point communication applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain Voltage
Gate Voltage
Input Power
Storage Temperature
Operating Backside Temperature
Symbol
VDD
VGG
Pin
Tstg
Top
Condition
Rating
10
-3.0
22
-65 to +175
-40 to +85
Unit
V
V
dBm
°C
°C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.
3. This product should be hermetically packaged
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Frequency Range
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Input Return Loss
Output Return Loss
Symbol
f
P
1dB
G
1dB
I
ddrf
η
add
RLi
RLo
VDD = 6V
IDD
=
650mA (Typ.)
ZS = ZL = 50Ω
29
16
-
-
-
-
Conditions
Limits
Min. Typ. Max.
17.5 - 20.0
31
21
700
30
-12
-8
-
26
950
-
-
-
Unit
GHz
dBm
dB
mA
%
dB
dB
Note:
RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
G.C.P.: Gain Compression Point
Edition 1.0
May 2000
1
EUDYNA [ EUDYNA DEVICES INC ]
