FSX027WF
General Purpose GaAs FET
FEATURES
•
•
•
•
Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz
High Power Gain: G1dB=10dB(Typ.)@8.0GHz
Hermetic Metal/Ceramic Package
Proven Reliability
DESCRIPTION
The FSX027WF is a general purpose GaAs FET designed for medium
power applications up to the 12GHz. These devices have a wide
dynamic range and are suitable for use in medium power, wide band,
linear drive amplifiers or oscillators.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
TSTG
TCH
Tc = 25°C
Condition
Rating
12
-5
1.5
-65 to 175
175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with
gate resistance of 1000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
P1dB
VDS = 3V, IDS = 30mA
f = 8GHz
Test Conditions
VDS = 3V, VGS = 0V
VDS = 3V, IDS = 54mA
VDS = 3V, IDS = 5.4mA
IGS = -5.4µA
Min.
70
-
-0.7
-5.0
-
-
Limit
Typ. Max.
110
100
-1.2
-
2.5
9.5
24.5
24.5
23.5
14.0
10.0
6.5
70
150
-
-1.7
-
-
-
-
-
-
-
-
-
100
Unit
mA
mS
V
V
dB
dB
dBm
dBm
dBm
dB
dB
dB
°C/W
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Thermal Resistance
CASE STYLE: WF
G1dB
Rth
f = 4GHz
-
VDS = 8V,
f = 8GHz 23.5
IDS = 0.7IDSS
f = 12GHz
-
f = 4GHz
-
VDS = 8V,
f = 8GHz
9.0
IDS = 0.7IDSS
-
f = 12GHz
Channel to Case
-
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1