P0120004P
1.5W GaAs Power FET (Pb-Free Type)
♦Features
· Up to 2.7 GHz frequency band
· Beyond +30 dBm output power
· Up to +45dBm Output IP3
· High Drain Efficiency
· 11dB Gain at 2.1GHz
· SOT-89 SMT Package
· Low Noise Figure
Pin No.
1
2, 4
3
Technical Note
SUMITOMO ELECTRIC
♦Functional
Diagram
Function
Input/Gate
Ground
Output/Drain
4
1
Number
of devices
2
3
Container
7” Reel
Anti-static
Bag
♦Ordering
Information
Part No
P0120004P
KP024J
Description
GaAs Power FET
2.11-2.17GHz
Application Circuit
1000
1
♦Applications
·Wireless communication system
·Cellular, PCS, PHS, W-CDMA, WLAN
♦Description
P0120004P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance.
The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI’s long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150°C. You can see the details in
Reliability and Quality Assurance.
♦Absolute
Maximum Ratings (@Tc=25°C)
Parameter
Symbol
Value
Units
Drain-Source Voltage
Vds
8
V
Gate-Source Voltage
Vgs
-4
V
Drain Current
Ids
Idss
---
RF Input Power
Pin
25
(*)
dBm
(continuous)
Power Dissipation
Pt
4.3
W
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
- 40 to +125
°C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
Values
Typ.
---
---
---
---
---
32
Vds=6V
Ids=400mA
f=2.1GHz
11
---
---
45
60
♦Electrical
Specifications (@Tc=25°C)
Parameter
DC
Saturated Drain Current
Transconductance
Pinchoff Voltage
Gate-Source Breakdown Voltage
RF
Thermal Resistance
Frequency
Output Power
@ 1dB Gain Compression
Small Signal Gain
Output IP3
Power Added Efficiency
Symbol
Idss
gm
Vp
|Vgs0|
Rth
f
P1dB
G
IP3
η
add
Test Conditions
Vds=3V, Vg=0V
Vds=6V, Ids=500mA
Vds=6V, Ids=50mA
Igso= - 50µA
Channel-Case
Min.
---
450
- 3.0
3.0
---
Max.
1600
---
- 1.7
---
22
2.7
---
---
---
---
Units
mA
mS
V
V
°C/W
GHz
dBm
dB
dBm
%
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-1-
EUDYNA [ EUDYNA DEVICES INC ]
