Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 100 GB 60 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
2
I t - value, Diode
Isolations-Prüfspannung
insulation test voltage
t
P
= 1ms
T
c
= 70°C
T
c
= 25°C
t
P
= 1ms, T
c
= 70°C
V
CES
I
C,nom.
I
C
I
CRM
600
100
130
200
V
A
A
A
T
c
= 25°C, Transistor
P
tot
445
W
V
GES
+/- 20V
V
I
F
100
A
I
FRM
200
A
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
2
t
1.250
A
2
s
RMS, f= 50Hz, t= 1min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
V
CE
= 600V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 600V, V
GE
= 0V, T
vj
= 125°C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
C
= 100A, V
GE
= 15V, T
vj
= 25°C
I
C
= 100A, V
GE
= 15V, T
vj
= 125°C
I
C
= 1,5mA, V
CE
= V
GE
, T
vj
= 25°C
V
CE sat
min.
-
-
V
GE(th)
4,5
typ.
1,95
2,20
5,5
max.
2,45
-
6,5
V
V
V
C
ies
-
4,3
-
nF
C
res
-
-
-
0,4
1
1
-
-
500
-
400
nF
µA
mA
nA
I
CES
I
GES
-
prepared by: Andreas Vetter
approved by: Michael Hornkamp
date of publication: 2000-04-26
revision: 1
1 (8)
BSM 100 GB 60 DLC
2000-02-08
EUPEC [ EUPEC GMBH ]
