BSM 150 GB 170 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R
G on,min
= 10 Ohm
Type
BSM 150 GB 170 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
P
tot
1250
+ 150
-40 ... + 125
≤
0.1
≤
0.32
4000
20
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
I
Cpuls
440
300
W
V
GE
I
C
220
150
Symbol
V
CE
V
CGR
1700
± 20
A
Values
1700
Unit
V
V
CE
I
C
Package
HALF-BRIDGE 2
Ordering Code
C67070-A2704-A67
1700V 220A
1
Oct-27-1997
EUPEC [ EUPEC GMBH ]
