Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 200 GB 170 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I t - value, Diode
Isolations-Prüfspannung
insulation test voltage
2
V
CES
T
C
= 80 °C
T
C
= 25 °C
t
P
= 1 ms, T
C
=80°C
I
I
C,nom.
1700
200
400
400
V
A
A
A
I
C
CRM
T
C
=25°C, Transistor
P
tot
1660
W
V
GES
+/- 20V
V
I
F
200
A
tp = 1 ms
I
FRM
400
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
2
It
11.000
A
2
s
RMS, f = 50 Hz, t = 1 min.
V
ISOL
3,4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 200A, V
GE
= 15V, T
vj
= 25°
C
I
C
= 200A, V
GE
= 15V, T
vj
= 125°
C
I
C
= 9mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
min.
V
CE sat
typ.
2,6
3,1
5,5
max.
3,2
3,6
6,5
V
V
V
-
-
4,5
V
GE
= -15V ... +15V
Q
G
-
2,4
-
µC
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
15
-
nF
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
V
CE
= 1700V, V
GE
= 0V, T
vj
= 25°
C
V
CE
= 1700V, V
GE
= 0V, T
vj
= 125°
C
C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°
I
I
C
res
CES
-
-
-
0,7
0,05
6
-
-
0,5
nF
mA
mA
GES
-
200
nA
prepared by: Regine Mallwitz
approved by: Christoph Lübke; 28.11.2000
date of publication: 28.11.2000
revision: 2 (Series)
1(8)
BSM200GB170DLC