BSM 200 GA 170 DN2
IGBT Power Module
• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R
G on,min
= 6.8 Ohm
Type
BSM 200 GA 170 DN2
BSM 200 GA 170 DN2 S
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
P
tot
1750
+ 150
-40 ... + 125
≤
0.07
≤
0.21
4000
20
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
I
Cpuls
580
400
W
V
GE
I
C
290
200
Symbol
V
CE
V
CGR
1700
± 20
A
Values
1700
Unit
V
V
CE
I
C
Package
SINGLE SWITCH 1
SSW SENSE 1
Ordering Code
C67070-A2705-A67
C67070-A2707-A67
1700V 290A
1700V 290A
1
Oct-27-1997