BSM 35 GD 120 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 35 GD 120 DN2
BSM35GD120DN2E3224
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
P
tot
280
+ 150
-40 ... + 125
≤
0.44
≤
0.8
2500
16
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
I
Cpuls
100
70
W
V
GE
I
C
50
35
Symbol
V
CE
V
CGR
1200
± 20
A
Values
1200
Unit
V
V
CE
I
C
Package
ECONOPACK 2
ECONOPACK 2K
Ordering Code
C67076-A2506-A67
C67070-A2506-A67
1200V 50A
1200V 50A
1
Oct-20-1997
EUPEC [ EUPEC GMBH ]
