BSM 75 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 75 GAL 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
R
THJCDC
V
is
-
-
-
-
P
tot
625
+ 150
-40 ... + 125
≤
0.2
≤
0.5
≤
0.36
2500
20
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
I
Cpuls
210
150
W
V
GE
I
C
105
75
Symbol
V
CE
V
CGR
1200
± 20
A
Values
1200
Unit
V
V
CE
I
C
Package
Ordering Code
1200V 105A
HALF BRIDGE GAL 1 C67076-A2011-A70
1
Nov-24-1997
EUPEC [ EUPEC GMBH ]
