Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BYM 300 B 170 DN2
vorläufige Daten
preliminary data
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Sperrspannung der Diode
Diode rerverse voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
Grenzlastintegral der Diode
I
2
t - value, Diode
Isolations-Prüfspannung
insulation test voltage
T
vj
= 25°C
V
CES
1700
V
T
C
= 80 °C
I
F
300
A
tp = 1 ms
I
FRM
600
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
2
I t
23,5
k A
2
s
RMS, f = 50 Hz, t = 1 min.
V
ISOL
4,0
kV
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
I
F
= 300A, V
GE
= 0V, T
vj
= 25°C
I
F
= 300A, V
GE
= 0V, T
vj
= 125°C
I
F
= 300A, - di
F
/dt = 4500A/µs
V
R
= 900V, V
GE
= -15V, T
vj
= 25°C
V
R
= 900V, V
GE
= -15V, T
vj
= 125°C
Sperrverzögerungsladung
recovered charge
I
F
= 300A, - di
F
/dt = 4500A/µs
V
R
= 900V, V
GE
= -15V, T
vj
= 25°C
V
R
= 900V, V
GE
= -15V, T
vj
= 125°C
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 300A, - di
F
/dt = 4500A/µs
V
R
= 900V, V
GE
= -15V, T
vj
= 25°C
V
R
= 900V, V
GE
= -15V, T
vj
= 125°C
E
rec
-
-
16
31
-
-
mWs
mWs
Q
r
-
-
34
75
-
-
µAs
µAs
I
RM
-
-
220
330
-
-
A
A
V
F
min.
-
-
typ.
2,2
2
max.
2,6
-
V
V
prepared by: Alfons Wiesenthal
approved by: Christoph Lübke
date of publication: 2002-11-25
revision: 2.2
1(4)
DB_BYM300B170DN2_2.2.xls
EUPEC [ EUPEC GMBH ]
