Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
min.
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ diode inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
T
C
= 25°C
L
σCE
R
CC'+EE'
-
-
typ.
-
10
max.
40
-
nH
mΩ
min.
V
GE
= 0V, T
vj
= 25°C,
V
GE
= 0V, T
vj
= 125°C,
I
F
=I
Nenn
,
I
F
=
I
F
=
15 A
15 A
600 A/us
300 V
300 V
600 A/us
300 V
300 V
600 A/us
300 V
300 V
E
rec
-
-
Q
r
-
-
I
RM
-
-
V
F
-
-
typ.
1,75
1,8
13
14
0,8
1,4
0,14
0,24
max.
2,15
-
-
-
-
-
-
-
V
V
A
A
µAs
µAs
mJ
mJ
- di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
,
- di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
,
- di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
Transistor Brems-Chopper/ transistor brake-chopper
V
GE
= 15V, T
vj
= 25°C,
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125°C,
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= V
GE
,
T
vj
= 25°C,
min.
I
C
=
I
C
=
I
C
=
15,0 A
15,0 A
0,4mA
V
GE(TO)
C
ies
600V
I
GES
V
CE sat
-
-
4,5
-
-
-
typ.
1,95
2,2
5,5
0,8
-
-
max.
2,55
-
6,5
-
5,0
400
V
V
V
nF
mA
nA
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
V
GE
= 0V, T
vj
= 25°C, V
CE
=
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
Diode Brems-Chopper/ diode brake-chopper
T
vj
= 25°C,
Durchlaßspannung
forward voltage
T
vj
= 125°C,
min.
I
F
=
I
F
=
15A
15A
V
F
-
-
typ.
2,15
2,25
max.
2,6
-
V
V
NTC-Widerstand/ NTC-thermistor
Nennwiderstand
rated resistance
Abweichung von R
100
deviation of R
100
Verlustleistung
power dissipation
B-Wert
B-value
min.
T
C
= 25°C
T
C
= 100°C, R
100
= 493
Ω
T
C
= 25°C
R
2
= R
1
exp [B(1/T
2
- 1/T
1
)]
R
25
∆R/R
P
25
B
25/50
-
-5
typ.
5
max.
-
5
20
kΩ
%
mW
K
3375
3(12)
EUPEC [ EUPEC GMBH ]
