Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
vorläufiges Datenblatt
preliminary datasheet
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
2
t - value, Diode
Spitzenverlustleistung der Diode
maximum power dissipation diode
Isolations-Prüfspannung
insulation test voltage
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
t
P
= 1 ms
T
j
= 25°C
T
j
= -25°C
T
C
= 80°C
T
C
= 25 °C
t
P
= 1 ms, T
C
= 80°C
V
CES
3300
3300
1200
2300
2400
V
I
C,nom.
I
C
I
CRM
A
A
A
T
C
=25°C, Transistor
P
tot
14,7
kW
V
GES
+/- 20V
V
I
F
1200
A
I
FRM
2400
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
440.000
A
2
s
T
j
= 125°C
P
RQM
1.500
kW
RMS, f = 50 Hz, t = 1 min.
V
ISOL
6.000
V
RMS, f = 50 Hz, Q
PD
£
10 pC (acc. to IEC 1287)
V
ISOL
2.600
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Gateladung
gate charge
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 1200A, V
GE
= 15V, Tvj = 25°C
I
C
= 1200A, V
GE
= 15V, T
vj
= 125°C
I
C
= 120 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
V
CE sat
min.
-
-
4,2
typ.
3,00
3,70
5,1
max.
3,65
4,45
6,0
V
V
V
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
145
-
nF
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
res
-
8
-
nF
V
GE
= -15V ... + 15V, V
CE
= 1800V
Q
G
-
22
-
µC
V
CE
= 3300V, V
GE
= 0V, T
vj
= 25°C
I
CES
-
-
5
mA
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: J. Biermann
approved by: Christoh Lübke; 2002-04-30
date of publication : 2002-04-23
revision: 3
1 (9)
FZ1200R33KL2_V Rev3.xls
EUPEC [ EUPEC GMBH ]
