欢迎访问ic37.com |
会员登录 免费注册
发布采购

FZ400R65KF1 参数 Datasheet PDF下载

FZ400R65KF1图片预览
型号: FZ400R65KF1
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT -模块 [IGBT-Module]
分类和应用: 晶体晶体管双极性晶体管局域网
文件页数/大小: 10 页 / 175 K
品牌: EUPEC [ EUPEC GMBH ]
 浏览型号FZ400R65KF1的Datasheet PDF文件第2页浏览型号FZ400R65KF1的Datasheet PDF文件第3页浏览型号FZ400R65KF1的Datasheet PDF文件第4页浏览型号FZ400R65KF1的Datasheet PDF文件第5页浏览型号FZ400R65KF1的Datasheet PDF文件第6页浏览型号FZ400R65KF1的Datasheet PDF文件第7页浏览型号FZ400R65KF1的Datasheet PDF文件第8页浏览型号FZ400R65KF1的Datasheet PDF文件第9页  
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 400 R 65 KF1
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
2
t - value, Diode
Isolations-Prüfspannung
insulation test voltage
Teilentladungs Aussetzspannung
partial discharge extinction voltage
t
P
= 1 ms
T
vj
=125°C
T
vj
=25°C
T
vj
=-40°C
T
C
= 80 °C
T
C
= 25 °C
t
P
= 1 ms, T
C
= 80°C
V
CES
I
C,nom.
I
C
I
CRM
6500
6300
5800
400
800
800
V
A
A
A
T
C
=25°C, Transistor
P
tot
7,4
kW
V
GES
+/- 20V
V
I
F
400
A
I
FRM
800
A
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
2
t
87
k A
2
s
RMS, f = 50 Hz, t = 1 min.
V
ISOL
10,2
kV
RMS, f = 50 Hz, Q
PD
typ. 10pC (acc. To IEC 1287)
V
ISOL
5,1
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 400A, V
GE
= 15V, T
vj
= 25°C
I
C
= 400A, V
GE
= 15V, T
vj
= 125°C
I
C
= 70mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
V
CE sat
min.
-
-
6,4
typ.
4,3
5,3
7,0
max.
4,9
5,9
8,1
V
V
V
V
GE
= -15V ... +15V
Q
G
-
5,6
-
µC
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
V
CE
= 6300V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 6500V, V
GE
= 0V, T
vj
= 125°C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
C
ies
-
56
0,4
40
-
-
nF
mA
mA
nA
I
CES
-
-
I
GES
-
400
prepared by: Dr. Oliver Schilling
approved by: Dr. Schütze 2002-07-05
date of publication: 2002-07-05
revision/Status: Series 1
1
FZ 400 R65 KF1 (final 1).xls