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SP6126EK1-L 参数 Datasheet PDF下载

SP6126EK1-L图片预览
型号: SP6126EK1-L
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压,降压控制器在TSOT6 [High-Voltage, Step Down Controller in TSOT6]
分类和应用: 控制器
文件页数/大小: 14 页 / 349 K
品牌: EXAR [ EXAR CORPORATION ]
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ABSOLUTE MAXIMUM RATINGS
These are stress ratings only, and functional operation of
the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum rating
conditions for extended periods of time may affect
reliability.
Input Voltage….................................................-0.3V to 30V
Lx………………………………………………….…-2V to 30V
FB……………..................................................-0.3V to 5.5V
Storage Temperature..………………...……-65
°C
to 150
°C
Junction Temperature...................................-40°C to 125°C
Lead Temperature (Soldering, 10 sec)….….………..300
°C
ESD Rating……….….…1kV LX, 2kV all other nodes, HBM
ELECTRICAL SPECIFICATIONS
Specifications are for T
AMB
=T
J
=25°C, and those denoted by
apply over the full operating range, -40°C< T
j
<125°C. Unless
otherwise specified: V
IN
=4.5V to 29V, C
IN
= 4.7µF.
PARAMETER
UVLO Turn-On Threshold
UVLO Turn-Off Threshold
UVLO Hysterisis
Operating
Input
Voltage
Range
Operating
Input
Voltage
Range
Operating VCC Current
Reference Voltage Accuracy
Reference Voltage Accuracy
Reference Voltage
Reference Voltage
Switching Frequency
Peak-to-peak ramp Modulator
Minimum ON-Time Duration
Minimum Duty Cycle
Maximum Duty Cycle
Gate
Driver
Turn-Off
Resistance
Gate
Driver
Pull-Down
Resistance
Gate
Driver
Pull-up
Resistance
V
IN
- VDR voltage difference
Overcurrent Threshold
LX pin Input Current
OFF interval during hiccup
Soft start time
SHDN Threshold
SHDN Threshold Hysteresis
MIN
4.2
4.0
TYP
4.35
4.2
0.2
MAX
4.5
4.4
UNITS
V
V
V
CONDITIONS
0°C< T
j
<125°C
0°C< T
j
<125°C
0°C< T
j
<125°C
4.5
7
0.3
0.5
0.5
0.6
0.588
510
0.6
600
V
IN
/5
40
100
50
4
3
4.5
270
25
3
0.9
300
30
100
5
1.0
100
29
29
3
2
0.612
690
100
0
60
8
6
5.5
330
35
9
1.1
V
V
mA
%
%
V
V
kHz
V
ns
%
%
k
VFB=1.2V
Internal resistor between GATE and
V
IN
V
IN
=12V,
V
FB
=0.5V,
Measure
resistance between GATE and VDR
V
IN
=12V,
V
FB
=0.7V,
Measure
resistance between GATE and V
IN
V
mV
uA
ms
ms
V
mV
Measure V
IN
– VDR, V
IN
>7V
Measure V
IN
- LX
V
LX
= V
IN
VFB=0.58V, measure between
V
IN
=4.5V and first GATE pulse
Apply voltage to FB
Nov07-08
RevG
SP6126: TSOT-6 PFET Buck Controller
2008 Exar Corporation
2