EFA025A-70
UPDATED 04/28/2006
Low Distortion GaAs Power FET
FEATURES
•
•
•
•
•
None-Hermetic Low Cost Ceramic 70mil Package
+20.0 dBm Output Power at 1dB Compression
10.0 dB Power Gain at 12GHz
7.0 dB Power Gain at 18GHz
Typical 1.50 dB Noise Figure and
10.0 dB Associated Gain at 12GHz
0.3 x 250 Micron Recessed “Mushroom” Gate
Si
3
N
4
Passivation
Advanced Epitaxial Heterojunction Profile Provides High
Power Efficiency, Linearity and Reliability
Caution! ESD sensitive device.
MIN
17.0
8.5
TYP
20.0
20.0
10.0
7.0
35
1.5
10
35
30
-10
-6
65
40
-2.0
-15
-14
370*
-3.5
105
MAX
UNITS
dBm
dB
%
dB
dB
mA
mS
V
V
V
o
C/W
•
•
•
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
NF
GA
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 12GHz
V
DS
= 6V, I
DS
≈
50% I
DSS
f = 18GHz
Gain at 1dB Compression
f = 12GHz
f = 18GHz
V
DS
= 6V, I
DS
≈
50% I
DSS
Power Added Efficiency at 1dB Compression
V
DS
= 6V, I
DS
≈
50% I
DSS
f = 12GHz
Noise Figure V
DS
= 3V, I
DS
= 15mA
f = 12GHz
Associate Gain V
DS
= 3V, I
DS
= 15mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
f = 12GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 1.0 mA
I
GD
= 1.0mA
I
GS
= 1.0mA
Notes:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOL
V
DS
V
GS
I
DS
I
GSF
P
IN
P
T
T
CH
T
STG
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
VALUE
6V
-4 V
52 mA
1 mA
@ 3dB compression
310 mW
150°C
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 3
Revised May 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
