Excelics
PRELIMINARY DATA SHEET
•
•
•
•
•
•
+37.0dBm TYPICAL OUTPUT POWER
16.0dB TYPICAL POWER GAIN AT 2GHz
0.5 X 12,000 MICRON RECESSED
“MUSHROOM” GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 200mA PER BIN RANGE
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'
EFA1200A
Low Distortion GaAs Power FET
'
'
'
6
*
6
*
6
*
6
*
6
*
6
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
f= 2GHz
f= 4GHz
f= 2GHz
f= 4GHz
Chip Thickness: 50
±
10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
MIN
35.5
14.5
2000
1400
TYP
37.0
37.0
16.0
11.0
3400
1800
-2.0
MAX
UNIT
dBm
dB
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=30mA
4400
mA
mS
-3.5
V
V
V
o
Drain Breakdown Voltage Igd=12mA
Source Breakdown Voltage Igs=12mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
-15
-14
4
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-4V
Vgs
Drain Current
Idss
2.0A
Ids
Forward Gate Current
300mA
50mA
Igsf
Input Power
36dBm
@3dB Compression
Pin
Channel Temperature
175
o
C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
34 W
28 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
