Excelics
DATA SHEET
•
•
•
•
•
•
+28.0dBm TYPICAL OUTPUT POWER
9.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 1200 MICRON RECESSED
“MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 20mA PER BIN RANGE
D
EFA120A
Low Distortion GaAs Power FET
670
50
116
D
D
48
340
100
40
S
95
G
S
80
G
50
S
G
S
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=3.0mA
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
MIN
26.0
8.0
TYP
28.0
28.0
9.5
7.0
34
MAX
UNIT
dBm
dB
%
200
140
340
180
-2.0
440
mA
mS
-3.5
V
V
V
o
Drain Breakdown Voltage Igd=1.2mA
Source Breakdown Voltage Igs=1.2mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
-15
-14
37
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-4V
Vgs
Drain Current
Idss
385mA
Ids
Forward Gate Current
30mA
5mA
Igsf
Input Power
26dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
3.7 W
3.1 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
