EFA240BV-100P
ISSUED 09/28/2007
Low Distortion GaAs Power FET
•
•
•
•
•
•
NON-HERMETIC 100MIL METAL FLANGE PACKAGE
+31.0dBm TYPICAL OUTPUT POWER
8.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
G
D
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
I
DSS
Gm
Vp
BV
GD
BV
GS
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 12GHz
V
DS
=8V, I
DS
=50% I
DSS
f= 18GHz
Gain at 1dB Compression
f= 12GHz
V
DS
=8V, I
DS
=50% I
DSS
f= 18GHz
Power Added Efficiency at 1dB Compression
f=12GHz
V
DS
=8V, I
DS
=50% I
DSS
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
V
DS
=3V, V
GS
=0V
V
DS
=3V, V
GS
=0V
V
DS
=3V,I
DS
=6mA
I
GD
=2.4mA
I
GS
=2.4mA
-13
-7
MIN
29.0
7
TYP
31.0
31.0
8.5
6.0
33
400
280
680
360
-2.0
-15
-14
15
-3.5
880
MAX
UNIT
dBm
dB
%
mA
mS
V
V
V
ºC/W
Thermal Resistance (Au-Sn Eutectic Attach)
Note:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
V
DS
V
GS
Igf
Igr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
60 mA
-1.8 mA
29 dBm
175
o
C
-65/175
o
C
9.1 W
CONTINUOUS
2
8V
-4V
10 mA
-0.6 mA
@ 3dB Compression
175
o
C
-65/175
o
C
7.6 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised September 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
