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EFA480B 参数 Datasheet PDF下载

EFA480B图片预览
型号: EFA480B
PDF下载: 下载PDF文件 查看货源
内容描述: 低失真功率的GaAs FET [Low Distortion GaAs Power FET]
分类和应用:
文件页数/大小: 2 页 / 48 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EFA480B的Datasheet PDF文件第2页  
Excelics
PRELIMINARY DATA SHEET
EFA480B/EFA480BV
960
50
D
D
156
D
D
48
Low Distortion GaAs Power FET
+34.0dBm TYPICAL OUTPUT POWER
6.0dB TYPICAL POWER GAIN FOR EFA480B AND
7.5dB FOR EFA480BV AT 12GHz
0.5X 4800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA480BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 80mA PER BIN RANGE
420
40
95
G
120
G
45
G
G
110
Chip Thickness: 60
±
10 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
f=8GHz
f=12GHz
f=8GHz
f=12GHz
f=12GHz
800
560
32.0
4.5
:
Via Hole
No Via Hole For EFA480B
EFA480B
TYP
34.0
34.0
10.0
6.0
32
1360
720
-2.0
-12
-7
-15
-14
10
-3.5
-12
-7
1760
800
560
MAX
MIN
32.0
5.0
EFA480BV
TYP
34.0
34.0
12.0
7.0
36
1360
720
-2.0
-15
-14
8
-3.5
1760
MAX
UNIT
dBm
dB
%
mA
mS
V
V
V
o
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=10mA
Drain Breakdown Voltage Igd=4.8mA
Source Breakdown Voltage Igs=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EFA480B
ABSOLUTE
1
EFA480BV
2
CONTINUOUS
8V
-3V
1.4A
20mA
@ 3dB
Compression
150
o
C
-65/150
o
C
11W
ABSOLUTE
1
12V
-8V
Idss
120mA
32dBm
175
o
C
-65/175
o
C
17W
CONTINUOUS
2
8V
-3V
1.75A
20mA
@ 3dB
Compression
150
o
C
-65/150
o
C
14W
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
120mA
32dBm
175
o
C
-65/175
o
C
14W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com