Excelics
DATA SHEET
•
•
•
•
•
•
+34.0dBm TYPICAL OUTPUT POWER
18.0dB TYPICAL POWER GAIN AT 2GHz
0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 80mA PER BIN RANGE
75
S
100
EFA480C
Low Distortion GaAs Power FET
680
104
160
D
D
72
620
155
G
S
G
S
94
120
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
f= 2GHz
f= 4GHz
f= 2GHz
f= 4GHz
f= 2GHz
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
MIN
32.0
16.0
TYP
34.0
34.0
18.0
12.5
40
MAX
UNIT
dBm
dB
%
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=10mA
800
560
1360
720
-2.0
1760
mA
mS
-3.5
V
V
V
o
Drain Breakdown Voltage Igd=4.8mA
Source Breakdown Voltage Igs=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
-15
-14
12
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
1.2A
Igsf
Forward Gate Current
120mA
20mA
Pin
Input Power
32dBm
@3dB Compression
o
Tch
Channel Temperature
175 C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
11.4 W
9.5 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
