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EFA480C-180F 参数 Datasheet PDF下载

EFA480C-180F图片预览
型号: EFA480C-180F
PDF下载: 下载PDF文件 查看货源
内容描述: 低失真功率的GaAs FET [Low Distortion GaAs Power FET]
分类和应用:
文件页数/大小: 2 页 / 30 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EFA480C-180F的Datasheet PDF文件第2页  
Excelics
PRELIMINARY DATA SHEET
EFA480C-180F
Low Distortion GaAs Power FET
NON-HERMETIC 180MIL METAL FLANGE PACKAGE
+34.0dBm TYPICAL OUTPUT POWER
16.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 4800 MICRON RECESSED
“MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
All Dimensions In Mils
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=10mA
MIN
32.0
15.0
TYP
34.0
34.0
16.5
11.5
40
MAX
UNIT
dBm
dB
%
800
560
1360
720
-2.0
1760
mA
mS
-3.5
V
V
V
o
Drain Breakdown Voltage Igd=4.8mA
Source Breakdown Voltage Igs=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
-15
-14
12*
C/W
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Gate-Source Voltage
-8V
-4V
Drain Current
Idss
1.2A
Ids
Forward Gate Current
120mA
20mA
Igsf
Input Power
32dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
11.4W
9.5W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com