EFA480C-CP083
UPDATED 12/28/2004
Low Distortion GaAs Power FET
FEATURES
•
•
•
•
•
•
NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
+33.5 dBm OUTPUT POWER AT 1dB COMPRESSION
16.0 dB GAIN AT 2 GHz
0.5x4800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH
RELIABILITY
All Dimensions in mil
Tolerance: ± 3 mil
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
*
PARAMETER/TEST CONDITIONS
Output Power at 1dB Compression
f=
Vds = 8 V, Ids=50% Idss
f=
Gain at 1dB Compression
f=
Vds = 8 V, Ids=50% Idss
f=
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f=
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
2.0 GHz
4.0 GHz
2.0 GHz
4.0 GHz
2.0 GHz
Caution! ESD sensitive device.
MIN
32.0
14.5
TYP
33.5
33.5
16.0
11.0
35
800
560
1360
720
-2.0
-12
-7
-15
-14
14*
o
MAX
UNITS
dBm
dB
%
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 10 mA
I
GD
= 4.8 mA
I
GS
= 4.8 mA
1760
mA
mS
-3.5
V
V
V
C/W
Notes:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
Idss
120mA
32dBm
175
o
C
-65/175
o
C
9.7W
CONTINUOUS
2
8V
-4.0V
1.0A
20mA
@ 3dB Compression
150
o
C
-65/150
o
C
8.1W
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised January 2005
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
