Excelics
DATA SHEET
•
•
•
•
•
•
+35.5dBm TYPICAL OUTPUT POWER
17.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 7200 MICRON RECESSED
“MUSHROOM” GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 120mA PER BIN RANGE
'
EFA720A
Low Distortion GaAs Power FET
'
'
6
*
6
*
6
*
6
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=20mA
O
Chip Thickness: 50
±
10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
MIN
33.5
16.0
TYP
35.5
35.5
17.5
12.5
36
MAX
UNIT
dBm
dB
%
1200
840
2040
1100
-2.0
2640
mA
mS
-3.5
V
V
V
o
Drain Breakdown Voltage Igd=7.2mA
Source Breakdown Voltage Igs=7.2mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
-15
-14
6
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-4V
Vgs
Drain Current
Idss
2.4A
Ids
Forward Gate Current
180mA
30mA
Igsf
Input Power
34dBm
@3dB Compression
Pin
Channel Temperature
175
o
C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
23 W
19 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
