Excelics
PRELIMINARY DATA SHEET
•
•
•
•
•
•
•
+31.0dBm TYPICAL OUTPUT POWER
8.5dB TYPICAL POWER GAIN AT 12GHz
HIGH BVgd FOR 10V BIAS
0.3 X 2400 MICRON RECESSED
“MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 40mA PER BIN RANGE
50
D
D
EFC240B
Low Distortion GaAs Power FET
960
156
D
D
48
350
40
S
G
S
120
G
S
G
S
G
S
100
95
50
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
Vds=10V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=10V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB compression
Vds=10V, Ids=50% Idss
f=12GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=6mA
O
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
MIN
29.0
7.0
TYP
31.0
31.0
8.5
6.0
33
MAX
UNIT
dBm
dB
%
320
200
520
280
-2.5
720
mA
mS
-4.0
V
V
V
o
Drain Breakdown Voltage Igd=2.4mA
Source Breakdown Voltage Igs=2.4mA
Thermal Resistance (Au-Sn Eutectic Attach)
-15
-10
-20
-17
20
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
14V
10V
Vds
Gate-Source Voltage
-8V
-4.5V
Vgs
Drain Current
Idss
570mA
Ids
Forward Gate Current
60mA
10mA
Igsf
Input Power
29dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
6.8 W
5.7 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
