欢迎访问ic37.com |
会员登录 免费注册
发布采购

EIA1111-2 参数 Datasheet PDF下载

EIA1111-2图片预览
型号: EIA1111-2
PDF下载: 下载PDF文件 查看货源
内容描述: 11.0-11.5 GHz的2瓦内部匹配功率场效应管 [11.0-11.5 GHz 2-Watt Internally Matched Power FET]
分类和应用:
文件页数/大小: 1 页 / 81 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
   
EIA1111-2
UPDATED 02/17/2006
11.0-11.5 GHz 2-Watt Internally Matched Power FET
.060 MIN.
Excelics
EIA1111-2
.060 MIN.
FEATURES
11.0– 11.5GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+34.0 dBm Output Power at 1dB Compression
11.0 dB Power Gain at 1dB Compression
32% Power Added Efficiency
Hermetic Metal Flange Package
.650±.008 .512
GATE
.319
DRAIN
YYWW
SN
.094
.382
.022
.04
.004
.070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
800mA
Gain at 1dB Compression
f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
800mA
Gain Flatness
f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
800mA
Power Added Efficiency at 1dB Compression
f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
800mA
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
33.0
10.0
TYP
34.0
11.0
MAX
UNITS
dBm
dB
±0.6
32
900
1400
-1.0
10
1100
1800
-2.5
11
o
dB
%
mA
mA
V
C/W
f = 11.0-11.5GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 14 mA
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12
-5
21.6mA
-3.6mA
32.5dBm
o
175 C
o
-65 to +175 C
CONTINUOUS
2
8V
-3V
7.2mA
-1.2mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
13W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
13W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised February 2006