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EIA1111-6 参数 Datasheet PDF下载

EIA1111-6图片预览
型号: EIA1111-6
PDF下载: 下载PDF文件 查看货源
内容描述: 11.0-11.5 GHz的6瓦内部匹配功率场效应管 [11.0-11.5 GHz 6-Watt Internally Matched Power FET]
分类和应用:
文件页数/大小: 1 页 / 81 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
   
EIA1111-6
UPDATED 12/06/2005
11.0-11.5 GHz 6-Watt Internally Matched Power FET
.060 MIN.
FEATURES
11.0– 11.5GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
10 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
Excelics
EIA1111-6
YM
SN
.094
.382
.060 MIN.
.650±.008 .512
GATE
DRAIN
.319
.022
.045
.004
.070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
1600mA
Gain at 1dB Compression
f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
1600mA
Gain Flatness
f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
1600mA
Power Added Efficiency at 1dB Compression
f = 11.0-11.5GHz
V
DS
= 8 V, I
DSQ
1600mA
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
36.5
9.0
TYP
37.5
10.0
MAX
UNITS
dBm
dB
±0.6
35
1800
2800
-1.0
4.5
2100
3500
-2.5
5.0
o
dB
%
mA
mA
V
C/W
f = 11.0-11.5GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 28 mA
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12
-5
I
DSS
43.2mA
-7.2mA
36.5dBm
o
175 C
o
-65 to +175 C
CONTINUOUS
2
8V
-3V
3.5A
14.4mA
-2.4mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
30W
Vds
Vgs
Ids
Igsf
Igsr
Pin
Tch
Tstg
Pt
30W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2005