EIA1414-6
UPDATED 12/5/2005
14.00-14.50 GHz 6-Watt Internally Matched Power FET
FEATURES
•
•
•
•
•
•
14.00– 14.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
8.0 dB Power Gain at 1dB Compression
33% Power Added Efficiency
Hermetic Metal Flange Package
.060 MIN.
Excelics
EIA1414-6
YM
SN
.094
.382
.060 MIN.
.650±.008 .512
GATE
DRAIN
.319
.022
.045
.004
.070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 14.00-14.50GHz
V
DS
= 8 V, I
DSQ
≈
1600mA
Gain at 1dB Compression
f = 14.00-14.50GHz
V
DS
= 8 V, I
DSQ
≈
1600mA
Gain Flatness
f = 14.00-14.50GHz
V
DS
= 8 V, I
DSQ
≈
1600mA
Power Added Efficiency at 1dB Compression
f = 14.00-14.50GHz
V
DS
= 8 V, I
DSQ
≈
1600mA
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
36.5
7.0
TYP
37.5
8.0
MAX
UNITS
dBm
dB
±0.6
33
1800
2800
-1.0
4.5
2100
3500
-2.5
5.0
o
dB
%
mA
mA
V
C/W
f = 14.00-14.50GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 28mA
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12
-5
I
DSS
43.2mA
-7.2mA
36.5dBm
175
o
C
-65 to +175
o
C
30W
CONTINUOUS
2
8V
-3V
3.5A
14.4mA
-2.4mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
30W
Vds
Vgs
Ids
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2005