Excelics
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14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
HIGH PAE( 25% TYPICAL)
+36.0dBm TYPICAL P
1dB
OUTPUT POWER
7/6dB TYPICAL G
1dB
POWER GAIN
NON-HERMETIC METAL FLANGE PACKAGE
EIA1415A-4P
Not recommended for new designs. Contact factory. Effective 03/2003
14.0-15.35GHz, 4W Internally Matched Power FET
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIA1415-4P
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Power Added Efficiency at 1dB compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Drain Current at 1dB Compression
Output 3
rd
Order Intercept Point
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=24mA
-13
2200
MIN
35.0
6
TYP
36.0
7
25
1800
43
2880
3000
-1.0
-15
4.5
o
MAX
UNIT
dBm
dB
P
1dB
G
1dB
PAE
Id
1dB
IP
3
I
dss
G
m
V
p
BV
gd
R
th
%
mA
dBm
3400
mA
mS
-2.5
V
V
C/W
Drain Breakdown Voltage Igd=9.6mA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
Idss
360mA
35dBm
175 C
-65/175
o
C
30W
o
CONTINUOUS
2
8V
-3V
3120mA
60mA
@ 3dB Compression
150
o
C
-65/150
o
C
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
