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EIA1616-8P 参数 Datasheet PDF下载

EIA1616-8P图片预览
型号: EIA1616-8P
PDF下载: 下载PDF文件 查看货源
内容描述: 16.2-16.4GHz , 8W内部匹配功率场效应管 [16.2-16.4GHz, 8W Internally Matched Power FET]
分类和应用:
文件页数/大小: 1 页 / 46 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
   
Excelics
16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
HIGH PAE( 20% TYPICAL)
+39dBm TYPICAL P
1dB
OUTPUT POWER
6dB TYPICAL G
1dB
POWER GAIN
NON-HERMETIC METAL FLANGE PACKAGE
EIA1616-8P
Not recommended for new designs. Contact factory. Effective 03/2003
16.2-16.4GHz, 8W Internally Matched Power FET
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIA1616-8P
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression f=16.2-16.4GHz
Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
Vds=8V, Idsq=0.5 Idss
f=16.2-16.4GHz
MIN
38
5
TYP
39
6
20
3520
f=16.2-16.4GHz
4400
5760
6000
-1.0
-13
-15
2.3
o
MAX
UNIT
dBm
dB
%
mA
dBm
P
1dB
G
1dB
PAE
Id
1dB
IP
3
I
dss
G
m
V
p
BV
gd
R
th
Power Added Efficiency at 1dB compression
f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss
Drain Current at 1dB Compression
Output 3
rd
Order Intercept Point
Vds=8V, Idsq=0.5 Idss
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=48mA
6800
mA
mS
-2.5
V
V
C/W
Drain Breakdown Voltage Igd=19.2mA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
Idss
720mA
38dBm
175 C
-65/175
o
C
60W
o
CONTINUOUS
2
8V
-3V
6240mA
120mA
@ 3dB Compression
150
o
C
-65/150
o
C
50W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com