EIB1415-2P
UPDATED 06/14/06
14.40-15.35GHz 2W Internally Matched Power FET
FEATURES
•
•
•
•
•
•
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14.40-15.35 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+33.0 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
24% Power Added Efficiency
-46 dBc IM3 at PO = 22.0 dBm SCL
Non-Hermetic Metal Flange Package
EIB1415-2P
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 14.40-15.35GHz
V
DS
= 8 V, I
DSQ
≈
800mA
Gain at 1dB Compression
f = 14.40-15.35GHz
V
DS
= 8 V, I
DSQ
≈
800mA
Gain Flatness
f = 14.40-15.35GHz
V
DS
= 8 V, I
DSQ
≈
800mA
Power Added Efficiency at 1dB Compression
f = 14.40-15.35GHz
V
DS
= 8 V, I
DSQ
≈
800mA
Drain Current at 1dB Compression
f = 14.40-15.35GHz
Output 3rd Order Intermodulation Distortion
2
∆f
= 10 MHz 2-Tone Test; Pout = 22.0 dBm S.C.L
V
DS
= 8 V, I
DSQ
≈
65% IDSS
f = 15.35GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
32.0
6.50
TYP
33.0
7.50
MAX
UNITS
dBm
dB
±0.6
24
850
-43
-46
1360
-2.5
8.0
1700
-3.5
9.0
o
dB
%
960
mA
dBc
mA
V
C/W
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 12 mA
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
10V
-5
21.6mA
-3.6mA
32.0dBm
175
o
C
-65 to +175
o
C
16W
CONTINUOUS
2
8V
-4V
7.2mA
-1.2mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
16W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised June 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
