EIC0910-12
UPDATED 03/07/2008
9.50-10.50 GHz 12-Watt Internally Matched Power FET
Excelics
EIC0910-12
.827±.010 .669
.120 MIN
.120 MIN
FEATURES
•
•
•
•
•
•
•
9.50–10.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 28.5 dBm SCL
100% Tested for DC, RF, and R
TH
.024
.421
YYWW
SN
.125
.508±.008
.442
.168±.010
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
≈
3200Ma
Gain at 1dB Compression
f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain Flatness
f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
≈
3200mA
f = 9.50-10.50GHz
Drain Current at 1dB Compression
f = 9.50-10.50GHz
Output 3rd Order Intermodulation Distortion
∆f=10MHz
2-Tone Test. Pout=28.5 dBm S.C.L
Vds = 10 V, I
DSQ
≈
65% I
DSS
f = 10.50GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2. S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
39.5
6.0
TYP
40.5
7.0
MAX
UNITS
dBm
dB
±0.6
30
3300
-43
-46
6500
-2.5
2.3
9000
-4.0
2.6
o
dB
%
4200
mA
dBc
mA
V
C/W
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 58 mA
Note: 1. Tested with 50 Ohm gate resistor.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
130mA
-21mA
40.0dBm
175
o
C
-65 to +175
o
C
57W
CONTINUOUS
2
10V
-4V
43mA
-7mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
57W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised March 2008
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
