EIC0910-25
9.50-10.50 GHz 25-Watt Internally Matched Power FET
2X 0.079 MIN
4X 0.102
FEATURES
•
•
•
•
•
•
•
9.50 – 10.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+44 dBm Output Power at 1dB Compression
7 dB Power Gain at 1dB Compression
30% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
0.945
0.803
Excelics
EIC0910-25
0.024
0.580
YYWW
SN
0.315
0.685
0.010
0.158
0.617
0.004
0.055
0.095
0.055
0.168
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
1.
Caution! ESD sensitive device.
MIN
43
6
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
≈
5000mA
Gain at 1dB Compression
f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
≈
5000mA
Gain Flatness
f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
≈
5000mA
Power Added Efficiency at 1dB Compression
f = 9.50-10.50GHz
V
DS
= 10 V, I
DSQ
≈
5000mA
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
2
f = 9.50-10.50GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 130 mA
TYP
44
7
MAX
UNITS
dBm
dB
±0.6
30
6800
11
-2.5
1.4
8300
16
-4.0
1.8
o
dB
%
mA
A
V
C/W
2.
Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 105mA and -10.5mA respectively
Overall Rth depends on case mounting.
MAXIMUM RATING AT 25°C
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
38.5 dBm
175 C
-65 to +175
o
C
83W
o
CONTINUOUS
2
10V
-4V
@ 3dB Compression
175
o
C
-65 to +175
o
C
83W
Vds
Vgs
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revision. 01
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
