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EIC0910A-8 参数 Datasheet PDF下载

EIC0910A-8图片预览
型号: EIC0910A-8
PDF下载: 下载PDF文件 查看货源
内容描述: 9.20-10.00 GHz的8瓦内部匹配功率场效应管 [9.20-10.00 GHz 8-Watt Internally Matched Power FET]
分类和应用:
文件页数/大小: 2 页 / 121 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EIC0910A-8的Datasheet PDF文件第2页  
EIC0910A-8
ISSUED DATE: 10/09/2007
9.20-10.00 GHz 8-Watt Internally Matched Power FET
FEATURES
9.20-10.0GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 28dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 9.20-10.0GHz
V
DS
= 10 V, I
DSQ
2200mA
Gain at 1dB Compression
f = 9.20-10.0GHz
V
DS
= 10 V, I
DSQ
2200mA
Gain Flatness
f = 9.20-10.0GHz
V
DS
= 10 V, I
DSQ
2200mA
Power Added Efficiency at 1dB Compression
f = 9.20-10.0GHz
V
DS
= 10 V, I
DSQ
2200mA
Drain Current at 1dB Compression
f = 9.20-10.0GHz
Output 3rd Order Intermodulation Distortion
2
∆f
= 10 MHz 2-Tone Test; Pout = 28dBm S.C.L
V
DS
= 10 V, I
DSQ
65% IDSS
f = 10.0GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 40 mA
Caution! ESD sensitive device.
MIN
38.5
6.5
TYP
39.0
7.5
MAX
UNITS
dBm
dB
±0.6
30
2300
-43
-46
4000
-2.5
3.5
5000
-4.0
4.0
o
dB
%
2600
mA
dBc
mA
V
C/W
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15V
-5V
96mA
-19.2mA
38.5dBm
175 C
o
-65 to +175 C
o
CONTINUOUS
2
10V
-4.5V
28.8mA
-4.8mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
38W
38W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised October 2007