EIC1012-12 参数 Datasheet PDF下载

EIC1012-12

10.95-12.75 GHz 12-Watt Internally Matched Power FET

FEATURES

•

•

•

•

•

•

•

10.95 – 12.75 GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+41.5 dBm Output Power at 1dB Compression

6 dB Power Gain at 1dB Compression

28% Power Added Efficiency

Hermetic Metal Flange Package

100% Tested for DC, RF, and R

TH

.827±.010 .669

.120 MIN

Excelics

EIC1012-12

.024

.421

YYWW

SN

.120 MIN

.125

.508±.008

.442

.168±.010

.004

.004

.063

.105±.008

ALL DIMENSIONS IN INCHES

ELECTRICAL CHARACTERISTICS (T

a

= 25°C)

Caution! ESD sensitive device.

SYMBOL

P

1dB

G

1dB

∆G

PAE

Id

1dB

I

DSS

V

P

R

TH

PARAMETERS/TEST CONDITIONS

1

Output Power at 1dB Compression

f = 10.95-12.75 GHz

V

DS

= 10 V, I

DSQ

≈

3200mA

Gain at 1dB Compression

f = 10.95-12.75 GHz

V

DS

= 10 V, I

DSQ

≈

3200mA

Gain Flatness

f = 10.95-12.75 GHz

V

DS

= 10 V, I

DSQ

≈3200mA

Power Added Efficiency at 1dB Compression

V

DS

= 10 V, I

DSQ

≈

3200mA

f =10.95-12.75 GHz

Drain Current at 1dB Compression

Saturated Drain Current

Pinch-off Voltage

Thermal Resistance

2

f =10.95-12.75 GHz

V

DS

= 3 V, V

GS

= 0 V

V

DS

= 3 V, I

DS

= 75 mA

MIN

41

5

TYP

41.5

6

MAX

UNITS

dBm

dB

±0.75

28

3700

8

-2.5

1.8

4100

10

-4.0

2.1

o

dB

%

mA

A

V

C/W

Note: 1) Tested with 30 Ohm gate resistor. Forward and reverse gate current should not exceed 130mA and -10.5mA respectively

2) Overall Rth depends on case mounting.

MAXIMUM RATING AT 25°C

1,2

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Input Power

Channel Temperature

Storage Temperature

Total Power Dissipation

ABSOLUTE

1

15

-5

37.5dBm

175

o

C

-65 to +175

o

C

71.5W

OPERATING

2

10V

-4V

@ 3dB Compression

175

o

C

-65 to +175

o

C

71.5W

Vds

Vgs

Pin

Tch

Tstg

Pt

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web:

www.excelics.com

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