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EIC1010-4 参数 Datasheet PDF下载

EIC1010-4图片预览
型号: EIC1010-4
PDF下载: 下载PDF文件 查看货源
内容描述: 10.0-10.70GHz 4瓦内部匹配功率FET [10.0-10.70GHz 4-Watt Internally-Matched Power FET]
分类和应用:
文件页数/大小: 2 页 / 101 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EIC1010-4的Datasheet PDF文件第2页  
EIC1010-4
ISSUED 10/29/2008
10.0-10.70GHz 4-Watt Internally-Matched Power FET
Excelics
EIC1010-4
FEATURES
10.0–10.70GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 25.5 dBm SCL
100% Tested for DC, RF, and R
TH
YYWW
SN
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
Freq
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Caution! ESD sensitive device.
MIN
10
35.5
6.5
36.5
7.5
±0.6
30
1200
-43
-46
2000
-2.5
5.5
2500
-4.0
6.0
o
TYP
MAX
10.7
UNITS
Ghz
dBm
dB
dB
%
Frequency
Output Power at 1dB Compression
V
DS
= 10 V, I
DSQ
1100mA
Gain at 1dB Compression
V
DS
= 10 V, I
DSQ
1100mA
Gain Flatness
V
DS
= 10 V, I
DSQ
1100mA
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
1100mA
Drain Current at 1dB Compression
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage
Thermal Resistance
3
2. S.C.L. = Single Carrier Level.
1300
mA
dBc
mA
V
C/W
V
DS
= 3 V, I
DS
= 20 mA
Note: 1. Tested with 100 Ohm gate resistor.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE
1
15V
-5V
48mA
-9.6mA
36dBm
175C
-65C to +175C
25W
CONTINUOUS
2
10V
-4V
14.4mA
-2.4mA
@ 3dB Compression
175C
-65C to +175C
25W
Vds
Vgs
Igf
Igr
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
October 2008