EIC1010-8
UPDATED 02/15/2005
10.00-10.70 GHz 8-Watt Internally Matched Power FET
Excelics
EIC1010-8
FEATURES
•
•
•
•
•
•
•
•
10.00– 10.70GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
31% Power Added Efficiency
-46 dBc IM3 at Po = 28.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
YM
SN
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
Caution! ESD sensitive device.
MIN
38.5
6.0
TYP
39.5
7.0
±0.6
31
2300
-43
-46
4000
-2.5
3.5
3) Overall Rth depends on case mounting.
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression f = 10.00-10.70GHz
V
DS
= 10 V, I
DSQ
≈
2200mA
Gain at 1dB Compression
f = 10.00-10.70GHz
V
DS
= 10 V, I
DSQ
≈
2200mA
Gain Flatness
f = 10.00-10.70GHz
V
DS
= 10 V, I
DSQ
≈
2200mA
Power Added Efficiency at 1dB Compression
f = 10.00-10.70GHz
V
DS
= 10 V, I
DSQ
≈
2200mA
Drain Current at 1dB Compression f = 10.00-10.70GHz
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
≈
65% IDSS
f = 10.70 GHz
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
MAX
UNITS
dBm
dB
dB
%
2600
mA
dBc
5000
-4.0
4.0
o
mA
V
C/W
V
DS
= 3 V, I
DS
= 40 mA
1) Tested with 100 Ohm gate resistor.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOL
V
DS
V
GS
I
DS
I
GSF
P
IN
P
T
T
CH
T
STG
Notes:
1.
2.
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
VALUE
10 V
-4.5 V
IDSS
80 mA
@ 3dB compression
38 W
175°C
-65/+175°C
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
Bias conditions must also satisfy the following equation P
T
< (T
CH
–T
PKG
)/R
TH
; where T
PKG
= temperature of package, and P
T
= (V
DS
* I
DS
) – (P
OUT
– P
IN
).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised February 2005
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
