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EIC1112-5 参数 Datasheet PDF下载

EIC1112-5图片预览
型号: EIC1112-5
PDF下载: 下载PDF文件 查看货源
内容描述: 11.7-12.7 GHz的5瓦内部匹配功率场效应管 [11.7-12.7 GHz 5-Watt Internally Matched Power FET]
分类和应用:
文件页数/大小: 2 页 / 86 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EIC1112-5的Datasheet PDF文件第2页  
EIC1112-5
ISSUED 07/03/2007
11.7-12.7 GHz 5-Watt Internally Matched Power FET
0.060 MIN
0.650±0.008
0.512
GATE
FEATURES
11.7– 12.7GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
6.5 dB Power Gain at 1dB Compression
25% Power Added Efficiency
Hermetic Metal Flange Package
Excelics
EIC1112-5
0.060 MIN
0.022
0.319
DRAIN
YYWW
2X 0.094
0.382
0.004
0.130
0.045
0.071±0.008
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 11.7-12.7GHz
V
DS
= 10 V, I
DSQ
1600mA
Gain at 1dB Compression
f = 11.7-12.7GHz
V
DS
= 10 V, I
DSQ
1600mA
Gain Flatness
f = 11.7-12.7GHz
V
DS
= 10 V, I
DSQ
1600mA
Power Added Efficiency at 1dB Compression
f = 11.7-12.7GHz
V
DS
= 10 V, I
DSQ
1600mA
Drain Current at 1dB Compression
f = 11.7-12.7GHz
-40
Output 3rd Order Intermodulation Distortion
∆f=10MHz
2-Tone Test. Pout=26.5 dBm S.C.L
Vds = 10 V, I
DSQ
65% I
DSS
f = 12.7GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
MIN
36.5
5.5
TYP
37.5
6.5
MAX
UNITS
dBm
dB
±0.6
25
1700
-43
2800
-2.5
5.0
3500
-4.0
5.5
o
dB
%
2000
mA
dBc
mA
V
C/W
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 24 mA
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
61.2mA
-10.2mA
35.5dBm
175 C
o
-65 to +175 C
o
CONTINUOUS
2
10V
-4V
20.4mA
-3.4mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
27W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
27W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised July 2007