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EIC1314-7 参数 Datasheet PDF下载

EIC1314-7图片预览
型号: EIC1314-7
PDF下载: 下载PDF文件 查看货源
内容描述: 13.75-14.50 GHz的7瓦内部匹配功率场效应管 [13.75-14.50 GHz 7-Watt Internally Matched Power FET]
分类和应用:
文件页数/大小: 4 页 / 247 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
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EIC1314-7
ISSUED 11/13/2008
13.75-14.50 GHz 7-Watt Internally Matched Power FET
.060 MIN.
FEATURES
13.75– 14.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+38.5 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
.650±.008 .512
GATE
Excelics
EIC1314-7
.060 MIN.
DRAIN
.319
YYWW
SN
.094
.382
.022
.045
.004
.070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
IMD3
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 13.75-14.50GHz
V
DS
= 10 V, I
DSQ
2400mA
Gain at 1dB Compression
f = 13.75-14.50GHz
V
DS
= 10 V, I
DSQ
2400mA
Gain Flatness
f = 13.75-14.50GHz
V
DS
= 10 V, I
DSQ
≈2400mA
Output 3rd Order Intermodulation Distortion
2
∆f
= 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L
V
DS
= 10 V, I
DSQ
65% IDSS
f = 14.50 GHz
Power Added Efficiency at 1dB Compression
f = 13.75-14.50GHz
V
DS
= 10 V, I
DSQ
2400mA
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
38
5
TYP
38.5
6
MAX
UNITS
dBm
dB
±0.6
-41
-45
25
2400
4
-2.5
2.6
3000
6.5
-4.0
3
o
dB
dBc
%
mA
A
V
C/W
f = 13.75-14.50GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 38 mA
Note: 1) Tested with 50 Ohm gate resistor.
3) Overall Rth depends on case mounting.
MAXIMUM RATING AT 25°C
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
35dBm
175 C
-65 to +175
o
C
50W
o
CONTINUOUS
2
10V
-4V
@ 3dB Compression
175
o
C
-65 to +175
o
C
50W
Vds
Vgs
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
issued November 2008