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EIC1414-4NH 参数 Datasheet PDF下载

EIC1414-4NH图片预览
型号: EIC1414-4NH
PDF下载: 下载PDF文件 查看货源
内容描述: 14.00-14.50GHz 4瓦内部匹配功率FET [14.00-14.50GHz 4-Watt Internally-Matched Power FET]
分类和应用:
文件页数/大小: 4 页 / 177 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
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EIC1414-4
UPDATED 08/21/2007
14.00-14.50GHz 4-Watt Internally-Matched Power FET
FEATURES
14.00 –14.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.0 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
-45 dBc IM3 at Po = 25.0 dBm SCL
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
Caution! ESD sensitive device.
MIN
35.5
5.0
TYP
36.0
6.0
±0.6
25
1100
-42
-45
2080
-2.5
5.5
2880
-4.0
6.0
o
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression f = 14.00-14.50GHz
V
DS
= 10 V, I
DSQ
1100mA
Gain at 1dB Compression
f = 14.00-14.50GHz
V
DS
= 10 V, I
DSQ
1100mA
Gain Flatness
f = 14.00-14.50GHz
V
DS
= 10 V, I
DSQ
1100mA
Power Added Efficiency at 1dB Compression
f = 14.00-14.50GHz
V
DS
= 10 V, I
DSQ
11000mA
Drain Current at 1dB Compression f = 14.00-14.50GHz
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 14.50GHz
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage
Thermal Resistance
3
V
DS
= 3 V, I
DS
= 20 mA
MAX
UNITS
dBm
dB
dB
%
1300
mA
dBc
mA
V
C/W
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFD
SYMBOLS
PARAMETERS
ABSOLUTE
1
15V
-5V
48mA
-9.6mA
35.5dBm
175C
-65C to +175C
25W
CONTINUOUS
2
10V
-4V
14.4mA
-2.4mA
@ 3dB Compression
175C
-65C to +175C
25W
Vds
Vgs
Igf
Igr
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised October 2007