EIC1415-2
UPDATED 08/20/2007
14.40-15.35GHz 2-Watt Internally-Matched Power FET
FEATURES
•
•
•
•
•
•
•
14.40 –15.35GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+33.5 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
-42 dBc IM3 at Po = 22.5 dBm SCL
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Gain at 1dB Compression
f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Gain Flatness
f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Power Added Efficiency at 1dB Compression
f = 14.40-15.35GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Drain Current at 1dB Compression f = 14.40-15.35GHz
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
≈
65% IDSS
f = 15.35GHz
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage
Thermal Resistance
3
V
DS
= 3 V, I
DS
= 10 mA
Caution! ESD sensitive device.
MIN
32.5
5.0
TYP
33.5
6.0
±0.6
25
600
-38
-42
1040
-2.5
11
1440
-4.0
12
o
MAX
UNITS
dBm
dB
dB
%
700
mA
dBc
mA
V
C/W
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE
1
15V
-5V
24mA
-4.8mA
33.0dBm
175C
-65C to +175C
12.5W
CONTINUOUS
2
10V
-4V
7.2mA
-1.2mA
@ 3dB Compression
175C
-65C to +175C
12.5W
Vds
Vgs
Igf
Igr
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised October 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
