EIC2224-15
ISSUED 04/04/2006
2.20 – 2.40 GHz 15W Internally Matched Power FET
2X 0.079 MIN
4X 0.102
FEATURES
•
•
•
•
•
•
•
2.20– 2.40GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+42.5 dBm Output Power at 1dB Compression
13.0 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
0.945
0.803
Excelics
EIC2224-15
0.024
0.580
YYWW
SN
0.315
0.685
0.010
0.158
0.617
0.004
0.055
0.095
0.055
0.168
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
V
DS
= 10V, I
DSQ
≈
4.6A
Gain at 1dB Compression
V
DS
= 10V, I
DSQ
≈
4.6A
f = 2.20-2.40GHz
f = 2.20-2.40GHz
Caution! ESD sensitive device.
MIN
41.5
12.0
TYP
42.5
13.0
MAX
UNIT
dBm
dB
Gain Flatness
f = 2.20-2.40GHz
V
DS
= 10V, I
DSQ
≈
4.6A
Power Added Efficiency at 1dB Compression
V
DS
= 10V, I
DSQ
≈
4.6A
f = 2.20-2.40GHz
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
2
f = 2.20-2.40GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 86mA
±0.6
35
4.8
8.6
-2.5
1.7
5.4
10.8
-4.0
1.9
o
dB
%
A
A
V
C/W
Note: 1. Tested with 25 Ohm gate resistor.
2.
Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15V
-5V
192mA
-33mA
42.0dBm
175 C
o
-65 to +175 C
o
CONTINUOUS
2
10V
-4V
64mA
-11mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
79W
79W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised April 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
