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EIC3439-4 参数 Datasheet PDF下载

EIC3439-4图片预览
型号: EIC3439-4
PDF下载: 下载PDF文件 查看货源
内容描述: 3.40-3.90GHz 4瓦内部匹配功率场效应管 [3.40-3.90GHz 4-Watt Internally Matched Power FET]
分类和应用:
文件页数/大小: 2 页 / 120 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EIC3439-4的Datasheet PDF文件第2页  
EIC3439-4
ISSUED DATED: 11/12/2007
3.40-3.90GHz 4-Watt Internally Matched Power FET
FEATURES
3.40–3.90GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
12.0 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at PO = 25.5 dBm SCL
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 3.40-3.90GHz
V
DS
= 10 V, I
DSQ
1100mA
Gain at 1dB Compression
f = 3.40-3.90GHz
V
DS
= 10 V, I
DSQ
1100mA
Gain Flatness
f = 3.40-3.90GHz
V
DS
= 10 V, I
DSQ
1100mA
Power Added Efficiency at 1dB Compression
f = 3.40-3.90GHz
V
DS
= 10 V, I
DSQ
1100mA
Drain Current at 1dB Compression
f = 3.40-3.90GHz
Output 3rd Order Intermodulation Distortion
2
∆f
= 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L
V
DS
= 10 V, I
DSQ
65% IDSS
f = 3.90GHz
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage
Thermal Resistance
3
Caution! ESD sensitive device.
MIN
35.5
11.0
TYP
36.5
12.0
MAX
UNITS
dBm
dB
±0.6
35
1200
-43
-46
2000
-2.5
5.5
2500
-4.0
6.0
o
dB
%
1500
mA
dBc
mA
V
C/W
V
DS
= 3 V, I
DS
= 20 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15V
-5V
48.0 mA
-9.6 mA
35.5dBm
o
175 C
o
-65 to +175 C
CONTINUOUS
2
10V
-4V
14.4 mA
-2.4 mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
25W
V
DS
V
GS
Igsf
Igsr
Pin
Tch
Tstg
Pt
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2007